Electromagnetic radiation sensor and method of manufacture
US7842533B2 · kind B2 · utility
5Cited by
8References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 7, 2009 |
| Grant date | Nov 30, 2010 |
| Priority date | — |
| Expiry date | May 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/011
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of forming a semiconductor sensor in one embodiment includes providing a substrate, forming a reflective layer on the substrate, forming a sacrificial layer on the reflective layer, forming an absorber layer with a thickness of less than about 50 nm on the sacrificial layer, forming an absorber in the absorber layer integrally with at least one suspension leg, and removing the sacrificial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.