Zinc oxide semiconductor and method of manufacturing the same
US7842539B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2008 |
| Grant date | Nov 30, 2010 |
| Priority date | — |
| Expiry date | Sep 12, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/903
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.