Electrical contacts for a semiconductor light emitting apparatus
US7842963B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 18, 2006 |
| Grant date | Nov 30, 2010 |
| Priority date | — |
| Expiry date | Dec 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A process for forming electrical contacts for a semiconductor light emitting apparatus is disclosed. The light emitting apparatus has a first layer of first conductivity type, an active layer for generating light overlying the first layer, and a second layer of second conductivity type overlying the active layer. The process involves forming at least a first and a second elongate electrical contact through the second layer and the active layer to provide electrical connection to the first layer, the first and second contacts oriented at an angle to each other, the first contact having a first end in proximity with the second contact, the first end being sufficiently spaced apart from the second contact such that when current is supplied to the first layer through the contacts, current contributions from the first end of the first contact and the second contact in an area generally between the first end and the second contact cause a current density in the area that is approximately equal to a current density elsewhere along the first and second contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.