Low-temperature-grown (LTG) insulated-gate PHEMT device and method
US7842972B2 · kind B2 · utility
4Cited by
8References
3Claims
0Family size
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Key dates
| Filing date | Dec 1, 2005 |
| Grant date | Nov 30, 2010 |
| Priority date | — |
| Expiry date | Dec 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.