Semiconductor device having MOS transistors which are serially connected via contacts and conduction layer

US7842976B2 · kind B2 · utility

Assignee

• ELPIDA MEMORY, INC. · JP

Inventors

• Isamu Fujii · Chiba, JP
• Shinichi Miyatake · Hamura, JP
• Yuko Watanabe · Tokyo, JP
• Homare Sato · Sagamihara, JP

Key dates

• Filing date: Oct 28, 2008
• Grant date: Nov 30, 2010
• Expiry date: Dec 20, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/482

Abstract

A semiconductor device includes a plurality of signal lines which are arranged at a predetermined pitch; first and second MOS transistors which are connected to the signal lines, and also serially connected to each other; and a connection device which functions as a connection node between the serially-connected first and second MOS transistors, and connects a source area of one of the first and second MOS transistors to a drain area of the other of the first and second MOS transistors via contact holes, which are formed through an insulating layer, and a conduction layer connected to the contact holes.