Manufacturing method of photoelectric conversion device
US7842988B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2010 |
| Grant date | Nov 30, 2010 |
| Priority date | — |
| Expiry date | May 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other. And the step of forming the first electroconductor, and the step of forming the third electroconductor are performed simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.