Electrostatic discharge protection device for an integrated circuit

US7843009B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• John Brunel · Grenoble, FR
• Nicolas Froidevaux · Les Granettes, FR

Key dates

• Filing date: Jul 26, 2007
• Grant date: Nov 30, 2010
• Expiry date: Sep 25, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/713

Abstract

An integrated circuit is made of a semiconductor material and comprises an input and/or terminal connected to an output transistor forming a parasitic element capable of triggering itself under the effect of an electrostatic discharge applied to the terminal. The integrated circuit comprises a protection device formed so as to be biased at the same time as the parasitic element under the effect of an electrostatic discharge, and more than the parasitic element to evacuate a discharge current as a priority.