Transistor providing different threshold voltages and method of fabrication thereof
US7843018B2 · kind B2 · utility
0Cited by
5References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 2, 2009 |
| Grant date | Nov 30, 2010 |
| Priority date | — |
| Expiry date | Feb 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor includes a channel region with a first portion and a second portion. A length of the first portion is smaller than a length of the second portion. The first portion has a higher threshold voltage than the second portion. The lower threshold voltage of the second portion allows for an increased ON current. Despite the increase attained in the ON current, the higher threshold voltage of the first portion maintains or lowers a relatively low OFF current for the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.