Patent · US Active

Memory devices with selective pre-write verification and methods of operation thereof

US7843741B2 · kind B2 · utility

4Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 7, 2009
Grant dateNov 30, 2010
Priority date
Expiry dateJul 9, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2013/0076
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A number of read cycles applied to a selected memory location of a memory device, such as a variable-resistance memory device, is monitored. Write data to be written to the selected memory location is received. Selective pre-write verifying and writing of the received write data to the selected memory location occurs based on the monitored number of read cycles. Selectively pre-write verifying and writing of the received write data may include, for example, writing received write data to the selected memory cell region without pre-write verification responsive to the monitored number of read cycles being greater than a predetermined number of read cycles.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.