Semiconductor laser diode
US7843980B2 · kind B2 · utility
1Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 2008 |
| Grant date | Nov 30, 2010 |
| Priority date | — |
| Expiry date | Jul 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An inventive semiconductor laser diode includes a Group III nitride semiconductor layered structure having a major crystal growth plane defined by a non-polar or semi-polar-plane. The Group III nitride semiconductor layered structure includes: a p-type cladding layer and an n-type cladding layer; an In-containing p-type guide layer and an In-containing n-type guide layer held between the p-type cladding layer and the n-type cladding layer; and an In-containing light emitting layer held between the p-type guide layer and the n-type guide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.