Semiconductor laser device
US7843984B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2009 |
| Grant date | Nov 30, 2010 |
| Priority date | — |
| Expiry date | Mar 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width W1 in a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width W2 in a direction perpendicular to a cavity length direction, the relations of W1>W2 and 80 μm≧W2≧60 μm are satisfied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.