Ultra high speed uniform plasma processing system
US7845309B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2004 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Mar 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32633
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for processing a substrate with a plasma. The apparatus includes first and second electrodes positioned with a spaced apart relationship. A separating ring has a vacuum-tight engagement with confronting surfaces of the first electrode and the second electrode to define an evacuatable processing region therebetween. Communicating with the processing region is a process gas port for introducing a process gas to the processing region. The processing region may be evacuated through a vacuum port defined in one of the first and second electrodes to a pressure suitable for exciting a plasma from the process gas in the processing region when the first and second electrodes are powered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.