Patent · US Active

Semiconductor devices including buried bit lines

US7846796B2 · kind B2 · utility

4Cited by
6References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 1, 2010
Grant dateDec 7, 2010
Priority date
Expiry dateJun 1, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B12/053

Abstract

A semiconductor device includes a plurality of channel structures on a semiconductor substrate. A bit line groove having opposing sidewalls is defined between sidewalls of adjacent ones of the plurality of channel structures. A plurality of bit lines are formed on corresponding ones of the opposing sidewalls, and the plurality of bit lines are electrically isolated from each other

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.