Method for forming memristor material and electrode structure with memristance
US7846807B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2009 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Jul 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/206
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Ion Implantation is used to form the memristor material and electrode structure with memristance. First, numerous electron-rich element atoms are implanted into a layer made of transition metal or non-metal. Then, a treating process (such as annealing) is proceeded to expel some electron-rich element atoms away the layer. After that, some electron-rich element vacancy rich regions are formed inside the layer, and then a memristor material is formed. Significantly, the usage of ion implantation can precisely control and flexibly adjust the distribution of the implanted atoms, and then both the amount and distribution of these depleted regions can be effectively adjusted. Hence, the quality of the memristor material is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.