Methods for controlling dopant concentration and activation in semiconductor structures
US7846822B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2005 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Jul 28, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/92
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides methods for fabricating semiconductor structures and devices, particularly ultra-shallow doped semiconductor structures exhibiting low electrical resistance. Methods of the present invention use modification of the composition of semiconductor surfaces to allow fabrication of a doped semiconductor structure having a selected dopant concentration depth profile, which provides useful junctions and other device components in microelectronic and nanoelectronic devices, such as transistors in high density integrated circuits. Surface modification in the present invention also allows for control of the concentration and depth profile of defects, such as interstitials and vacancies, in undersaturated semiconductor materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.