Semiconductor device and manufacturing method of semiconductor device
US7847405B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2009 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | May 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one aspect of the present invention, a semiconductor device may include an inter-wiring dielectric film in which a wiring trench is formed, a metal wiring layer formed in the wiring trench in the inter-wiring dielectric film, a first barrier layer formed on a side surface of the wiring trench, the first barrier layer being an oxide film made from a metal different from a main constituent metal element in the wiring layer, a second barrier layer formed on a side surface of the wiring layer, the second barrier layer having a Si atom of the metal used in the wiring layer, and a gap formed between the first barrier layer and the second barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.