Method for dry etching fluid feed slots in a silicon substrate
US7850284B2 · kind B2 · utility
0Cited by
7References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 17, 2007 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Oct 12, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/052
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A method of micro-machining a semiconductor substrate to form one or more through slots therein. The semiconductor substrate has a device side and a fluid side opposite the device side. The method includes diffusing a p-type doping material into the device side of the semiconductor substrate in one or more through slot locations to be etched through a thickness of the substrates. The semiconductor substrate is then etched with a dry etch process from the device side of the substrate to the fluid side of the substrate so that one or more through slots having a reentrant profile are formed in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.