Method of manufacturing electron-emitting device and method of manufacturing image display apparatus
US7850502B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2009 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Aug 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/0423
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.