Display device
US7851804B2 · kind B2 · utility
14Cited by
6References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 25, 2008 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Mar 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A single-crystal semiconductor layer which is separated from a single-crystal semiconductor substrate, and bonded to and provided over a supporting substrate is used, whereby a transistor having uniform characteristics can be formed. A reference circuit having a bipolar transistor is provided, whereby temperature dependence of a driving transistor which is driven by supplying current to the light-emitting element of a pixel is compensated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.