Semiconductor device and method for fabricating the same
US7851871B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2008 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Jun 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0144
Abstract
A high-voltage transistor and a peripheral circuit including a second conductivity type MOSFET are provided together on a first conductivity type semiconductor substrate. The high-voltage transistor includes: a low concentration drain region of a second conductivity type formed in the semiconductor substrate; a low concentration source region of a second conductivity type formed in the semiconductor substrate and spaced apart from the low concentration drain region; and a high concentration source region of a second conductivity type having a diffusion depth deeper than that of the low concentration source region. A diffusion depth of the low concentration source region is equal to that of source/drain regions of the MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.