Solid-state imaging device
US7851880B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2007 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Jun 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/05042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging device includes a semiconductor substrate having a foreside provided with an imaging area and an electrode pad, the imaging area having an array of optical sensors, the electrode pad being disposed around a periphery of the imaging area; a transparent substrate joined to the foreside of the semiconductor substrate with a sealant therebetween; underside wiring that extends through the semiconductor substrate from the electrode pad to an underside of the semiconductor substrate; and a protective film composed of an inorganic insulating material and interposed between the semiconductor substrate and the sealant, the protective film covering at least the electrode pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.