High performance chirped electrode design for large area optoelectronic devices
US7852543B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2010 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Apr 5, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/12
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base. Pixels include oppositely doped semiconductor layer and a top electrode formed on the oppositely doped semiconductor layer. The top electrode has a grid pattern with at least one busbar and a plurality of fingers extending from the busbar, and spacing between the fingers decreases with distance from the bondpad along the busbar. Each pixel can also include a multiple quantum well formed on the semiconductor base. The top electrode shape produces an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.