Method of manufacturing a piezoelectric thin film device
US7854049B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 16, 2007 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Jun 26, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49005
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a piezoelectric thin film device of the present invention, the degree of flexibility is enhanced in selection of a piezoelectric material constituting a piezoelectric thin film and the crystal orientation in the piezoelectric thin film. A piezoelectric thin film filter, including four film bulk acoustic resonators, has a configuration where a filter section for providing a filter function of the piezoelectric thin film filter is bonded with a flat base substrate mechanically supporting the filter section via an adhesive layer. In manufacturing of the piezoelectric thin film filter, a piezoelectric thin film is obtained by performing removal processing on a piezoelectric substrate, but the piezoelectric thin film obtained by removal processing cannot independently stand up under its own weight. For this reason, a prescribed member including the piezoelectric substrate is previously bonded to the base substrate as a support prior to the removal processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.