Semiconductor laser device and method of manufacturing the same
US7855093B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2009 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Oct 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing semiconductor laser device capable of reducing κL, with manufacturing restrictions satisfied, is provided. In a distributed-feedback or distributed-reflective semiconductor laser device, immediately before burying regrowth of a diffraction grating, halogen-based gas is introduced to a reactor, and etching is performed on the diffraction grating so that each side wall has at least two or more crystal faces and a ratio of length of an upper side in a waveguide direction to a bottom side parallel to a (100) surface is 0 to 0.3. And, a reactive product formed on side surfaces of the diffraction grating and in trench portions between stripes of the diffraction grating at an increase of temperature for regrowth is removed. Therefore, the diffraction grating with reduced height and a sine wave shape is obtained, thereby κL of the device is reduced. Thus, an oscillation threshold and optical output efficiency can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.