Photo-detector for detecting image signal of infrared laser radar and method of manufacturing the same
US7855094B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2009 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Apr 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.