Method of forming organic thin film and method of manufacturing semiconductor device using the same
US7855121B2 · kind B2 · utility
3Cited by
2References
20Claims
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Key dates
| Filing date | Mar 27, 2009 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Mar 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/655
Abstract
Provided are a method of forming an organic semiconductor thin film and a method of manufacturing a semiconductor device using the. According to example embodiments, a method of forming an organic semiconductor thin film at least may include exposing a lower substrate coated with an organic semiconductor solution using a method of generating a shearing stress to the portion of the lower substrate coated with the organic semiconductor solution. A guide structure may be formed adjacent to the organic semiconductor solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.