Treatment method for surface of substrate, method of fabricating image sensor by using the treatment method, and image sensor fabricated by the same
US7855149B2 · kind B2 · utility
4Cited by
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15Claims
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Key dates
| Filing date | Jan 16, 2009 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Jan 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
Provided may be a treatment method to remove defects created on the surface of a substrate, a method of fabricating an image sensor by using the treatment method, and an image sensor fabricated by the same. The treatment method may include providing a semiconductor substrate including a surface defect, providing a chemical solution to a surface of the semiconductor substrate, and removing the surface defect by consuming the surface of the semiconductor substrate and forming a chemical oxide layer on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.