Formation of a slot in a silicon substrate
US7855151B2 · kind B2 · utility
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18References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2007 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | May 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A slot is formed that reaches through a first side of a silicon substrate to a second side of the silicon substrate. A trench is laser patterned. The trench has a mouth at the first side of the silicon substrate. The trench does not reach the second side of the silicon substrate. The trench is dry etched until a depth of at least a portion of the trench is extended approximately to the second side of the silicon substrate (12). A wet etch is performed to complete formation of the slot. The wet etch etches silicon from all surfaces of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.