Method of producing active matrix substrate
US7855152B2 · kind B2 · utility
5Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2007 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Dec 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a production method for an active matrix substrate in which a plurality of contact holes are formed by a one-mask process so as to reach metal films which are present at different depth positions in an insulating layer and are not evaporated by dry etching using a fluorine-containing gas. The method includes a step of performing dry etching using mixed gas of CHF3, CF4 and O2 to form the plurality of contact hole, a step of subjecting the plurality of contact holes to oxygen ashing, and a step of forming a transparent conductive film in the plurality of contact holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.