Bipolar junction transistor-based uncooled infrared sensor and manufacturing method thereof
US7855366B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Apr 29, 2008 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Feb 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A BJT (bipolar junction transistor)-based uncooled IR sensor and a manufacturing method thereof are provided. The BJT-based uncooled IR sensor includes: a substrate; at least one BJT which is formed to be floated apart from the substrate; and a heat absorption layer which is formed on an upper surface of the at least one BJT, wherein the BJT changes an output value according heat absorbed through the heat absorption layer. Accordingly, it is possible to provide a BJT-based uncooled IR sensor capable of being implemented through a CMOS compatible process and obtaining more excellent temperature change detection characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.