Hybrid carbon nanotube FET (CNFET)-FET static RAM (SRAM) and method of making same
US7855403B2 · kind B2 · utility
5Cited by
0References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2009 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Sep 29, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Hybrid carbon nanotube FET (CNFET), static ram (SRAM) and method of making same. A static ram memory cell has two cross-coupled semiconductor-type field effect transistors (FETs) and two nanotube FETs (NTFETs), each having a channel region made of at least one semiconductive nanotube, a first NTFET connected to the drain or source of the first semiconductor-type FET and the second NTFET connected to the drain or source of the second semiconductor-type FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.