Solid-state imaging device and method of manufacturing the same
US7855406B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2007 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Mar 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.