Embedded phase-change memory and method of fabricating the same
US7855421B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Dec 4, 2006 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Jun 17, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/947
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.