Electronic circuit device having silicon substrate
US7855429B2 · kind B2 · utility
12Cited by
0References
14Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 23, 2008 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Oct 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic circuit device comprises a silicon substrate having front and rear surfaces, a semiconductor element formed on the front surface, and at least one through-hole penetrating through the front surface and the rear surface. At least one passive element is supported by the silicon substrate. At least one connecting element is disposed in the through-hole of the silicon substrate for electrically connecting the semiconductor element to the passive element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.