Semiconductor device
US7855433B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 27, 2008 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Aug 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
Abstract
A semiconductor device has a semiconductor substrate having a first conductivity type and a resistor having a substantially U-shaped contour and being formed from an epitaxial layer disposed on the semiconductor substrate and having a second conductivity type different from the first conductivity type. A first trench is formed around an exterior of the resistor to a depth sufficient enough to reach the semiconductor substrate. A second trench is formed in an interior of the resistor to provide the resistor with the U-shaped contour. First and second insulating films are disposed in the first and second trenches, respectively. A heavily-doped region of the second conductivity type having an impurity concentration sufficient to obtain a contact with a metal wire is arranged at both ends of the resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.