Electrostatic discharge (ESD) circuit and method that includes P-channel device in signal path
US7855862B1 · kind B1 · utility
8Cited by
17References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2007 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Nov 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
Abstract
One example of an ESD protection circuit (100) can include a p-channel field effect transistor (PFET) (110) having a source-drain path connected between a pad (102) and a protected circuit (106). In an ESD event, PFET (110) can provide an ESD discharge path between pad (102) and a high power supply node (114) or low power supply node (112).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.