Patent · US Active

Surface emitting semiconductor component

US7856045B2 · kind B2 · utility

4Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 5, 2006
Grant dateDec 21, 2010
Priority date
Expiry dateNov 27, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8142
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A surface emitting semiconductor component (1) with an emission direction which comprises a semiconductor body (2). The semiconductor body comprises a plurality of active regions (4a, 4b) which are suitable for the generation of radiation and are arranged in a manner spaced apart from one another, a frequency-selective element (6) being formed in the semiconductor body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.