Optic mask and manufacturing method of thin film transistor array panel using the same
US7858450B2 · kind B2 · utility
0Cited by
2References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 5, 2005 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Mar 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optic mask for crystallizing amorphous silicon comprises a first slit region including a plurality of slits regularly arranged for defining incident region of laser beam, wherein the slits of the first slit region are formed to slope by a predetermined angle to the direction of transfer of the optic mask in crystallization process, and wherein the slits of the first slit region includes a first slit having a first length and a second slit having a second length which is longer than the first length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.