Method of filling a trench and method of forming an isolating layer structure using the same
US7858492B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2008 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Dec 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of filling a trench in a substrate ensures that a void or seam is not left in the material occupying the trench. First, a preliminary insulating layer is formed so as to extend contiguously along the bottom and sides of the trench and along an upper surface of the substrate. Impurities are then implanted into a portion of the preliminary insulating layer adjacent the top of the first trench to form a first insulating layer having a doped region and an undoped region. The doped region is removed to form a first insulating layer pattern at the bottom and sides of the first trench, and which first insulating layer pattern defines a second trench. The second trench is then filled with insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.