Patent · US Active

Integrated circuit, intermediate structure and a method of fabricating a semiconductor structure

US7858514B2 · kind B2 · utility

0Cited by

18References

28Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Ulrike Roessner · Dresden, DE
Daniel Koehler · Althengstett, DE
Ilona Juergensen · Dresden, DE
Mirko Vogt · Dresden, DE

Key dates

Filing date	Jun 29, 2007
Grant date	Dec 28, 2010
Priority date	—
Expiry date	Aug 26, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a method of fabricating a semiconductor structure, a carbon containing mask is fabricated over a dielectric layer. The mask exposes the surface of the dielectric layer at least partly in a region between two adjacent conducting lines. A contact hole is etched into the dielectric layer in the region between the two adjacent conducting lines.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.