Back contact for thin film solar cells
US7858872B2 · kind B2 · utility
10Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2009 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Mar 13, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/543
Abstract
The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device.The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.