Method and apparatus for reducing dark current and hot pixels in CMOS image sensors
US7858914B2 · kind B2 · utility
3Cited by
9References
14Claims
0Family size
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Key dates
| Filing date | Nov 20, 2007 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Nov 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses for reducing dark current and hot pixels in CMOS image sensors. A pixel apparatus includes a photosensor capable of generating dark current, a floating diffusion region coupled to the photosensor by way of a charge transfer transistor, a rest transistor connected between the floating diffusion region and an array pixel supply voltage. The array supply voltage varies between first and second voltages when sampling pixel signals from the pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.