Active pixel sensor having two wafers
US7858915B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2008 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | May 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/026
Abstract
A vertically-integrated image sensor includes a sensor wafer connected to a support circuit wafer. Each pixel region on the sensor wafer includes a photodetector, a charge-to-voltage conversion mechanism, a transfer mechanism for transferring charge from the photodetector to the charge-to-voltage conversion mechanism, and a reset mechanism for discharging the charge-to-voltage conversion mechanism. The support circuit wafer includes an amplifier and other support circuitry for each pixel region on the sensor wafer. An inter-wafer connector directly connects each charge-to-voltage mechanism on the sensor wafer to a respective gate to an amplifier on the support circuit wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.