Patent · US Expired

Doped semiconductor material and process for production thereof

US7858967B2 · kind B2 · utility

8Cited by

7References

20Claims

0Family size

Assignee

Novaled GmbH · DE

Inventors

Martin Pfeiffer · Winnenden, DE
Leo Karl · Dresden, DE
Ansgar Werner · Dresden, DE
Torsten Fritz · Dresden, DE

Key dates

Filing date	Feb 20, 2003
Grant date	Dec 28, 2010
Priority date	—
Expiry date	Oct 17, 2023

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldBasic materials chemistry
WIPO sectorChemistry

Abstract

The invention relates to a doped organic semiconductor material with increased charge carrier density and more effective charge carrier mobility, which may be obtained by doping an organic semiconductor material with a chemical compound comprising one or several organic molecular groups (A) and at least one further compound partner (B). The desired doping effect is achieved after cleavage of at least one organic molecular group (A) from the chemical compound by means of at least one organic molecular group (A) or by means of the product of a reaction of at least one molecular group (A) with another atom or molecule.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.