Method of aligning deposited nanotubes onto an etched feature using a spacer
US7858979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2009 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | May 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an aligned connection between a nanotube layer and a raised feature is disclosed. A substrate having a raised feature has spacers formed next to the side of the raised feature. The spacers are etched until the sidewalls of the raised feature are exposed forming a notched feature at the top of the spacers. A patterned nanotube layer is formed such that the nanotube layer overlies the top of the spacer and contacts a side portion of the raised feature in the notched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.