Semiconductor device
US7859049B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 25, 2009 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Feb 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
Provided is a semiconductor device. A well region (2) formed on a semiconductor substrate (1) includes a plurality of trench regions (12), and a source electrode (10) is connected to a source region (6) formed on a substrate surface between the trench regions (12). Adjacently to the source region (6), a high concentration region (11) is formed, which is brought into butting contact with the source electrode (10) together with the source region (6), whereby a substrate potential is fixed. A drain region (5) is formed at a bottom portion of the trench region (12), whose potential is taken to the substrate surface by a drain electrode (9) buried inside the trench region (12). An arbitrary voltage is applied to a gate electrode (4a, 4b), and the drain electrode (9), whereby carriers flow from the source region (6) to the drain region (5) and the semiconductor device is in an on-state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.