Patent · US Active

Edge termination for semiconductor device

US7859076B2 · kind B2 · utility

11Cited by

2References

11Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Rob Van Dalen · Veghel, NL
Maarten Jacobus Swanenberg · Berg en Dal, NL

Key dates

Filing date	May 22, 2006
Grant date	Dec 28, 2010
Priority date	—
Expiry date	Jun 23, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/126

Abstract

A semiconductor device has active region (30) and edge termination region (32) which includes a plurality of floating field regions (46). Field plates (54) extend in the edge termination region (32) inwards from contact holes (56) towards the active region (30) over a plurality of floating field regions (46). Pillars (40) may be provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.