Semiconductor optical amplifying device, semiconductor optical amplifying system and semiconductor optical integrated element
US7859745B2 · kind B2 · utility
5Cited by
7References
8Claims
0Family size
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Key dates
| Filing date | Apr 30, 2008 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Jan 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34366
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A polarization-independent SOA having an InP substrate used as a semiconductor substrate, and an active layer taking an MQW structure formed of a barrier layer made of GaInAs with tensile strain applied thereto and a well layer made of GaInNAs with no strain applied thereto alternately laminated in a plurality of layers, here, four layers of the well layer and five layers of the barrier layer are alternately laminated, is proposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.