Patent · US Active

Semiconductor optical amplifier

US7859746B2 · kind B2 · utility

2Cited by
2References
9Claims
0Family size

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Key dates

Filing dateAug 14, 2008
Grant dateDec 28, 2010
Priority date—
Expiry dateNov 24, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/02
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A polarization-independent SOA is provided which uses an InP substrate (11) as a semiconductor substrate and uses GaInNAs having introduced tensile strain as an active layer (14). With this configuration, the polarization independence is achieved by introducing the tensile strain, and high saturation optical output power is realized by reducing the film thickness of the active layer (14) as well as the gain peak wavelength is increased by reducing the band gap of the active layer (14) through use of GaInNAs made by adding nitrogen (N) to GaInAs as a material of the active layer (14) so as to achieve high gain especially in C-band and L-band even when band filling exits at the time of injecting a high current into the active layer (14).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.