Method for producing insulation structures

US7862731B2 · kind B2 · utility

Assignee

• Conti Temic microelectronic GmbH · DE

Inventors

• Matthias Aikele · Munich, DE
• Albert Engelhardt · Munich, DE
• Marcus Frey · Weil der Stadt, DE
• Bernhard Schmid · Friedberg, DE
• Helmut Seidel · Starnberg, DE

Key dates

• Filing date: Sep 12, 2003
• Grant date: Jan 4, 2011
• Expiry date: Jul 10, 2027

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2201/0178
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

To form an isolation structure in a semiconductor substrate, at least two trenches are formed with a rib therebetween in the semiconductor substrate, and then the semiconductor material in the area of the trenches and particularly the rib is converted to an electrically insulating material. For example, this is accomplished by thermal oxidation of silicon semiconductor material of the rib.